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? IRGPS66160DPBF 1 www.irf.com ? 2014 international rectifier submit datasheet feedback november 13, 2014 base part number package type standard pack orderable part number form quantity IRGPS66160DPBF super 247 tube 25 IRGPS66160DPBF absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 240 i c @ t c = 100c continuous collector current 160 i cm pulse collector current, v ge = 15v 360 i lm clamped inductive load current, v ge = 20v ? 480 i frm @ t c = 100c diode repetitive peak forward current ?? 80 i fm diode maximum forward current ? 480 v ge continuous gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 750 w p d @ t c = 100c maximum power dissipation 375 t j operating junction and -40 to +175 c ? t stg storage temperature range soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) a thermal resistance parameter min. typ. max. units r ? jc (igbt) thermal resistance junction-to-case-(each igbt) ? ??? ??? 0.20 c/w r ? cs thermal resistance, case-to-sink (flat, greased surface) ??? 0.24 ??? r ? ja thermal resistance, junction-to-ambient (typical socket mount) ??? ??? 40 r ? jc (diode) thermal resistance junction-to-case-(each diode) ? ??? ??? 1.37 v ces = 600v i c = 160a, t c =100c t sc ?? 5s, t j(max) = 175c v ce(on) typ. = 1.65v @ i c = 120a applications ?? welding ?? h bridge converters features benefits low v ce(on) and switching losses high efficiency in a wide range of applications optimized diode for full bridge hard switch converters optimized for welding and h bridge converters square rbsoa and maximum temperature of 175c improved reliability due to rugged hard switching performance and high power capability 5s short circuit enables short circuit protection operation positive v ce (on) temperature co-efficient excellent current sharing in parallel operation lead-free, rohs compliant environmentally friendly g c e gate collector emitter ? insulated gate bipolar transistor with ultrafast soft recovery diode ? e g n-channel c IRGPS66160DPBF ? super ? 247 ?
? IRGPS66160DPBF electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ? ? v v ge = 0v, i c = 100a ? ? v (br)ces / ? t j temperature coeff. of breakdown voltage ? 0.54 ? v/c v ge = 0v, i c = 4.0ma (25c-175c) v ce(on) collector-to-emitter saturation voltage ? 1.65 1.95 v i c = 120a, v ge = 15v, t j = 25c ? 1.95 ? i c = 120a, v ge = 15v, t j = 150c ? 2.0 ? i c = 120a, v ge = 15v, t j = 175c v ge(th) gate threshold voltage 4.0 ? 6.5 v v ce = v ge , i c = 5.6ma ? v ge(th) / ? t j threshold voltage te mperature coeff. ? -16 ? mv/c v ce = v ge , i c = 5.6ma (25c-175c) gfe forward transconductance ? 86 ? s v ce = 50v, i c = 120a, pw = 20s i ces collector-to-emitter leakage current ? 1.0 150 v ge = 0v, v ce = 600v ? 2000 ? v ge = 0v, v ce = 600v, t j = 175c i ges gate-to-emitter leakage current ? ? 400 na v ge = 20v v f ? diode forward voltage drop ? ? 1.80 2.60 v i f = 24a ? 1.30 ? i f = 24a, t j = 175c switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max units conditions q g total gate charge (turn-on) ? 220 ? nc i c = 120a q ge gate-to-emitter charge (turn-on) ? 60 ? v ge = 15v q gc gate-to-collector charge (turn-on) ? 90 ? v cc = 400v e on turn-on switching loss ? 4470 ? j ? i c = 120a, v cc = 400v, v ge =15v r g = 4.7 ? , l= 66h, t j = 25c energy losses include tail & diode reverse recovery ? e off turn-off switching loss ? 3430 ? e total total switching loss ? 7900 ? t d(on) turn-on delay time ? 80 ? ns ? t r rise time ? 75 ? t d(off) turn-off delay time ? 190 ? t f fall time ? 40 ? e on turn-on switching loss ? 5360 ? j ? i c = 120a, v cc = 400v, v ge =15v r g = 4.7 ? , l= 66h, t j = 175c energy losses include tail & diode reverse recovery ? ? e off turn-off switching loss ? 4390 ? e total total switching loss ? 9750 ? t d(on) turn-on delay time ? 80 ? ns t r rise time ? 130 ? t d(off) turn-off delay time ? 260 ? t f fall time ? 90 ? c ies input capacitance ? 7660 ? v ge = 0v c oes output capacitance ? 470 ? pf v cc = 30v c res reverse transfer capacitance ? 250 ? f = 1.0mhz rbsoa reverse bias safe operating area t j = 175c, i c = 480a full square v cc = 480v, vp 600v v ge = +20v to 0v scsoa ? short circuit safe operating area ? 5 ? ? ? ? ? s ? t j = 150c,v cc = 400v, vp 600v v ge = +15v to 0v erec reverse recovery energy of the diode ? 420 ? j t j = 175c t rr diode reverse recovery time ? 95 ? ns v cc = 400v, i f = 24a, v ge = 15v i rr peak reverse recovery current ? 34 ? a rg = 4.7 ??? l=200h, ls=150nh a notes: ? v cc = 80% (v ces ), v ge = 20v, rg = 4.7 ??? l=66h. ? r ? is measured at t j of approximately 90c. ? refer to an-1086 for guidelines for measuring v (br)ces safely. ? pulse width limited by max. junction temperature. ? values influenced by parasitic l and c in measurement. ? fsw =40khz, refer to figure 26. 2 www.irf.com ? 2014 international rectifier submit datasheet feedback november 13, 2014
? IRGPS66160DPBF fig. 5 - reverse bias soa t j = 175c; v ge = 20v 25 50 75 100 125 150 175 t c (c) 0 50 100 150 200 250 i c ( a ) 25 50 75 100 125 150 175 t c (c) 0 100 200 300 400 500 600 700 800 p t o t ( w ) 1 10 100 1000 v ce (v) 0.1 1 10 100 1000 i c ( a ) 10sec 100sec tc = 25c tj = 175c single pulse dc 1msec fig. 4 - forward soa t c = 25c; t j 175c; v ge = 15v fig. 2 - maximum dc collector current vs. case temperature 10 100 1000 v ce (v) 1 10 100 1000 i c ( a ) fig. 3 - power dissipation vs. case temperature 0.1 1 10 100 f , frequency ( khz ) 0 50 100 150 200 250 l o a d c u r r e n t ( a ) for both: duty cycle : 50% tj = 175c tcase = 100c gate drive as specified power dissipation = 375w fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) i square wave: v cc diode as specified 3 www.irf.com ? 2014 international rectifier submit datasheet feedback november 13, 2014
? IRGPS66160DPBF fig. 10 - typical v ce vs. v ge t j = -40c 4 www.irf.com ? 2014 international rectifier submit datasheet feedback november 13, 2014 fig. 11 - typical v ce vs. v ge t j = 25c fig. 6 - typ. igbt output characteristics t j = -40c; tp = 20s fig. 7 - typ. igbt output characteristics t j = 25c; tp = 20s 0 2 4 6 8 10 v ce (v) 0 80 160 240 320 400 480 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 0 2 4 6 8 10 v ce (v) 0 80 160 240 320 400 480 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 0 2 4 6 8 10 v ce (v) 0 80 160 240 320 400 480 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 v f (v) 0 80 160 240 320 400 480 i f ( a ) -40c 25c 175c 51 01 52 0 v ge (v) 0 2 4 6 8 v c e ( v ) i ce = 60a i ce = 120a i ce = 240a fig. 8 - typ. igbt output characteristics t j = 175c; tp = 20s 51 01 52 0 v ge (v) 0 2 4 6 8 v c e ( v ) i ce = 60a i ce = 120a i ce = 240a fig. 9 - typ. diode forward voltage drop characteristics
? IRGPS66160DPBF fig. 16 - typ. energy loss vs. r g t j = 175c; v ce = 400v, i ce = 120a; v ge = 15v fig. 15 - typ. switching time vs. i c t j = 175c; v ce = 400v, r g = 4.7 ? ; v ge = 15v 51 01 52 0 v ge (v) 0 2 4 6 8 v c e ( v ) i ce = 60a i ce = 120a i ce = 240a 2 4 6 8 10 12 14 16 v ge (v) 0 80 160 240 320 400 480 i c e ( a ) t j = 25c t j = 175c 0 50 100 150 200 250 i c (a) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on fig. 13 - typ. transfer characteristics v ce = 50v; tp = 20s 0 20 40 60 80 100 r g ( ? ) 10 100 1000 10000 s w i c h i n g t i m e ( n s ) t r td off t f td on fig. 17 - typ. switching time vs. r g t j = 175c; v ce = 400v, i ce = 120a; v ge = 15v 0 50 100 150 200 250 i c (a) 0 5000 10000 15000 20000 25000 30000 e n e r g y ( ? j ) e off e on fig. 12 - typical v ce vs. v ge t j = 175c fig. 14 - typ. energy loss vs. i c t j = 175c; ; v ce = 400v, r g = 4.7 ? ; v ge = 15v 0 20406080100 rg ( ? ) 0 5000 10000 15000 20000 25000 30000 e n e r g y ( ? j ) e off e on 5 www.irf.com ? 2014 international rectifier submit datasheet feedback november 13, 2014
? IRGPS66160DPBF fig. 22 - typ. diode e rr vs. i f t j = 175c fig. 21 - typ. diode q rr vs. di f /dt v cc = 400v; v ge = 15v; t j = 175c fig. 23 - v ge vs. short circuit time v cc = 400v; t c = 150c 10 20 30 40 50 i f (a) 10 20 30 40 i r r ( a ) r g = 50 ? r g = 10 ? r g = 4.7 ? r g = 22 ? 0 10 20 30 40 50 r g ( ?? 0 10 20 30 40 i r r ( a ) 200 400 600 800 1000 1200 1400 di f /dt (a/s) 10 15 20 25 30 35 40 i r r ( a ) fig. 18 - typ. diode i rr vs. i f t j = 175c 200 600 1000 1400 di f /dt (a/s) 500 1500 2500 3500 4500 q r r ( n c ) 22 ? 10 ? 50 ? 4.7 ? 24a 48a 12a fig. 19 - typ. diode i rr vs. r g t j = 175c 10 20 30 40 50 i f (a) 0 200 400 600 800 1000 e n e r g y ( j ) r g = 10 ? r g = 4.7 ? r g = 50 ? r g = 22 ? fig. 20 - typ. diode i rr vs. di f /dt v cc = 400v; v ge = 15v; i f = 24a; t j = 175c 9 10111213141516 v ge (v) 0 4 8 12 16 20 t i m e ( s ) 0 200 400 600 800 1000 c u r r e n t ( a ) t sc i sc 6 www.irf.com ? 2014 international rectifier submit datasheet feedback november 13, 2014
? IRGPS66160DPBF 7 www.irf.com ? 2014 international rectifier submit datasheet feedback november 13, 2014 fig. 27 - maximum transient thermal impedance, junction-to-case (igbt) 0 100 200 300 400 500 600 v ce (v) 10 100 1000 10000 100000 c a p a c i t a n c e ( p f ) cies coes cres fig. 24 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz 0 50 100 150 200 250 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 400v v ces = 300v fig. 25 - typical gate charge vs. v ge i ce = 120a 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r ma l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= ? i ? ri ci= ? i ? ri ? c ? c ? 4 ? 4 r 4 r 4 ri (c/w) ? i (sec) ? 0.00487 0.000014 0.05032 0.000114 0.09091 0.003734 0.05519 0.017034 100 125 150 175 case temperature (c) 0 40 80 120 160 200 r e p e t i t i v e p e a k c u r r e n t ( a ) d=0.3 d=0.2 d=0.1 fig 26. maximum diode repetitive forward peak current vs. case temperature
? IRGPS66160DPBF fig. 28 - maximum transient thermal impedance, junction-to-case (diode) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= ? i ? ri ci= ? i ? ri ? c ? c ? 4 ? 4 r 4 r 4 ri (c/w) ? i (sec) ? 0.02893 0.000034 0.43845 0.000326 0.60287 0.003626 0.30143 0.02205 8 www.irf.com ? 2014 international rectifier submit datasheet feedback november 13, 2014
? IRGPS66160DPBF fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit fig.c.t.3 - s.c. soa circuit fig.c.t.4 - switching loss circuit fig.c.t.5 - resistive load circuit fig.c.t.6 - bvces filter circuit 0 1k vcc dut l l rg 80 v dut vcc + - dc 4x dut vcc r sh l rg vcc dut / driver diode clamp / dut -5v rg vcc dut r = vcc icm g force c sense 100k dut 0.0075f d1 22k e force c force e sense 9 www.irf.com ? 2014 international rectifier submit datasheet feedback november 13, 2014
? IRGPS66160DPBF fig. wf1 - typ. turn-off loss waveform @ t j = 175c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 175c using fig. ct.4 fig. wf4 - typ. s.c. waveform @ t j = 150c using fig. ct.3 fig. wf3 - typ. diode recovery waveform @ t j = 175c using fig. ct.4 -30 0 30 60 90 120 150 180 210 -100 0 100 200 300 400 500 600 700 -0.7 -0.2 0.3 0.8 1.3 i ce (a) v ce (v) time(s) 90% i ce 10% v ce 10% i ce eoff loss tf -30 0 30 60 90 120 150 180 210 -100 0 100 200 300 400 500 600 700 -0.7 -0.2 0.3 0.8 1.3 i ce (a) v ce (v) time (s) test current 90% i ce 10% v ce 10% i ce tr eon loss -40 -30 -20 -10 0 10 20 30 -0.20 0.00 0.20 0.40 0.60 i f (a) time (s) peak i rr t rr q rr -100 0 100 200 300 400 500 600 700 800 900 -100 0 100 200 300 400 500 600 700 800 900 -4.0 0.0 4.0 8.0 ice (a) vce (v) time (us) v ce i ce 10 www.irf.com ? 2014 international rectifier submit datasheet feedback november 13, 2014
? IRGPS66160DPBF super 247 package outline dimensions are shown in millimeters (inches) super 247 part marking information 11 www.irf.com ? 2014 international rectifier submit datasheet feedback november 13, 2014 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ super 247 package is not recommended for surface mount application. assembly lot code top example: this is an irfps37n50a with assembly lot code 1789 international rectifier logo 89 irfps37n50a 17 part number assembled on ww 19, 1997 in the assembly line "c" note: "p" in assembly line position indicates "lead-free" 719c date code year 7 = 1997 week 19 line c
? IRGPS66160DPBF ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ qualification information ? qualification level industrial super 247 n/a rohs compliant yes moisture sensitivity level ? ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability/ ?? applicable version of jedec standar d at the time of product release. revision history date comments ?? added i fm diode maximum forward current = 480a with the note ? on page 1. ?? removed note ?? from switching losses test condition on page 2. 11/13/2014 12 www.irf.com ? 2014 international rectifier submit datasheet feedback november 13, 2014

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